TSM680P06CI C0G

Manufacturer :

Taiwan Semiconductor Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

16.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Power Dissipation (Max) :

17W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

68mOhm @ 6A, 10V

Supplier Device Package :

ITO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA