- Manufacturer :
- IXYS
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Tc)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 409 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- Die
- Power Dissipation (Max) :
- 70W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 1.5A, 10V
- Supplier Device Package :
- Die
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5.5V @ 50µA
- Datasheets
- IXTD3N50P-2J