BUK9E1R8-40E,127

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

16400 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power Dissipation (Max) :

349W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 25A, 10V

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

2.1V @ 1mA