TK40E10K3,S1X(S

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

84 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4000 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-220-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

15mOhm @ 20A, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 1mA