FQD13N10TM
- Mfr.Part #
- FQD13N10TM
- Manufacturer
- Rochester Electronics, LLC
- Package/Case
- -
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock:
- In Stock
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- Manufacturer :
- Rochester Electronics, LLC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 450 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 2.5W (Ta), 40W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 5A, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQD13N10TM