IXTF6N200P3

Manufacturer :

IXYS

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

2000 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

143 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3700 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

ISOPLUSi5-Pak™

Power Dissipation (Max) :

215W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.2Ohm @ 3A, 10V

Supplier Device Package :

ISOPLUS i4-PAC™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 250µA