DMN2013UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25.8 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

2453 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-PowerUDFN

Power Dissipation (Max) :

660mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11mOhm @ 8.5A, 4.5V

Supplier Device Package :

U-DFN2020-6 (Type E)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.1V @ 250µA