R6511END3TL1
- Mfr.Part #
- R6511END3TL1
- Manufacturer
- Rohm Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- 650V 11A TO-252, LOW-NOISE POWER
- Stock:
- In Stock
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- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 670 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 124W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 3.8A, 10V
- Supplier Device Package :
- TO-252
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 320µA
- Datasheets
- R6511END3TL1