TPN13008NH,L1Q

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 40 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

700mW (Ta), 42W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

13.3mOhm @ 9A, 10V

Supplier Device Package :

8-TSON Advance (3.1x3.1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 200µA