BSC039N06NSATMA1
- Mfr.Part #
- BSC039N06NSATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 19A/100A TDSON
- Stock:
- In Stock
Request A Quote(RFQ)
- * E-Mail:
- * Part name:
- * Quantity(pcs):
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 19A (Ta), 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000 pF @ 30 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 2.5W (Ta), 69W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3.9mOhm @ 50A, 10V
- Supplier Device Package :
- PG-TDSON-8-6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.8V @ 36µA
- Datasheets
- BSC039N06NSATMA1