IPB025N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

206 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

14800 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation (Max) :

300W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 100A, 10V

Supplier Device Package :

PG-TO263-7

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 275µA