TPW1R104PB,L1XHQ

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4560 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

960mW (Ta), 132W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.14mOhm @ 60A, 10V

Supplier Device Package :

8-DSOP Advance

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 500µA