BSM180C12P3C202
- Mfr.Part #
- BSM180C12P3C202
- Manufacturer
- Rohm Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 180A MODULE
- Stock:
- In Stock
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- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 180A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000 pF @ 10 V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power Dissipation (Max) :
- 880W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +22V, -4V
- Vgs(th) (Max) @ Id :
- 5.6V @ 50mA
- Datasheets
- BSM180C12P3C202