PJMP990N65EC_T0_00001

Manufacturer :

Panjit International Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.7A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

306 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

47.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

990mOhm @ 2A, 10V

Supplier Device Package :

TO-220AB-L

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA