IPW65R190C6
- Mfr.Part #
- IPW65R190C6
- Manufacturer
- Rochester Electronics, LLC
- Package/Case
- -
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock:
- In Stock
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- Manufacturer :
- Rochester Electronics, LLC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 73 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620 pF @ 100 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 151W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 7.3A, 10V
- Supplier Device Package :
- PG-TO247-3-41
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 730µA
- Datasheets
- IPW65R190C6