HAT2199R-EL-E

Manufacturer :

Rochester Electronics, LLC

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1060 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

2W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

16.5mOhm @ 5.5A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-