SCT2750NYTB
- Mfr.Part #
- SCT2750NYTB
- Manufacturer
- Rohm Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SICFET N-CH 1700V 5.9A TO268
- Stock:
- In Stock
Request A Quote(RFQ)
- * E-Mail:
- * Part name:
- * Quantity(pcs):
- * Captcha:
-
- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A (Tc)
- Drain to Source Voltage (Vdss) :
- 1700 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 275 pF @ 800 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Power Dissipation (Max) :
- 57W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 975mOhm @ 1.7A, 18V
- Supplier Device Package :
- TO-268
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +22V, -6V
- Vgs(th) (Max) @ Id :
- 4V @ 630µA
- Datasheets
- SCT2750NYTB