2SD2206,T6F(J

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

900 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92MOD

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

100 V