Supplier Device Package:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock Action
TK8P60W,RVQ Toshiba Semiconductor and Storage
MOSFET N CH 600V 8A...
1
RFQ
50,000
In-stock
Get Quote
TK8A65W,S5X Toshiba Semiconductor and Storage
MOSFET N-CH 650V 7.8...
1
RFQ
50,000
In-stock
Get Quote
TK8Q65W,S1Q Toshiba Semiconductor and Storage
MOSFET N-CH 650V 7.8...
1
RFQ
7
In-stock
Get Quote
TK8A60W,S4VX Toshiba Semiconductor and Storage
MOSFET N-CH 600V 8A...
1
RFQ
50,000
In-stock
Get Quote
TK8Q60W,S1VQ Toshiba Semiconductor and Storage
MOSFET N-CH 600V 8A...
1
RFQ
50,000
In-stock
Get Quote
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