Transistors - FETs, MOSFETs - Single

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Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id, Vgs：

Gate Charge (Qg) (Max) @ Vgs：

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2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	HUF75939S3ST	Rochester Electronics, LLC	N-CHANNEL POWER ...	1	PDF RFQ	800 In-stock	Get Quote
	STB95N4F3	STMicroelectronics	MOSFET N-CH 40V 80A...	1	PDF RFQ	391 In-stock	Get Quote

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