Supplier Device Package:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
IPN60R3K4CEATMA1 Infineon Technologies
MOSFET N-CH 600V 2.6...
1
RFQ
50,000
In-stock
Get Quote
IPN60R1K5PFD7SATMA1 Infineon Technologies
MOSFET N-CH 650V 3.6...
1
RFQ
50,000
In-stock
Get Quote
IPD60R3K4CEAUMA1 Infineon Technologies
MOSFET N-CH 650V 2.6...
1
RFQ
50,000
In-stock
Get Quote
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