Supplier Device Package:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
IPD60R380C6ATMA1 Infineon Technologies
MOSFET N-CH 600V 10....
1
RFQ
44,421
In-stock
Get Quote
IPB65R380C6 Rochester Electronics, LLC
N-CHANNEL POWER M...
1
RFQ
3,263
In-stock
Get Quote
IPD65R400CEAUMA1 Infineon Technologies
MOSFET N-CH 650V 15....
1
RFQ
1,448
In-stock
Get Quote
IPD65R380E6ATMA1 Infineon Technologies
MOSFET N-CH 650V 10....
1
RFQ
2,227
In-stock
Get Quote
IPB60R380C6ATMA1 Infineon Technologies
MOSFET N-CH 600V 10....
1
RFQ
50,000
In-stock
Get Quote
IPD65R380C6ATMA1 Infineon Technologies
MOSFET N-CH 650V 10....
1
RFQ
50,000
In-stock
Get Quote
IPD60R380C6 Infineon Technologies
MOSFET N-CH 600V 10....
1
RFQ
50,000
In-stock
Get Quote
IPD65R380C6BTMA1 Infineon Technologies
MOSFET N-CH 650V 10....
1
RFQ
50,000
In-stock
Get Quote
IPB65R380C6ATMA1 Infineon Technologies
MOSFET N-CH 650V 10....
1
RFQ
17,860
In-stock
Get Quote
IPD65R380E6BTMA1 Infineon Technologies
MOSFET N-CH 650V 10....
1
RFQ
50,000
In-stock
Get Quote
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