Product Status:
Supplier Device Package:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
TK7P60W5,RVQ Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A...
1
RFQ
50,000
In-stock
Get Quote
STL11N65M2 STMicroelectronics
MOSFET N-CH 650V PO...
1
RFQ
980
In-stock
Get Quote
STD11N65M2 STMicroelectronics
MOSFET N-CH 650V 7A...
1
RFQ
303
In-stock
Get Quote
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