Supplier Device Package:
Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
FQAF19N60 Rochester Electronics, LLC
MOSFET N-CH 600V 11....
1
RFQ
681
In-stock
Get Quote
IRFU9N20D Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
IRFR9N20DTR Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
IRFR9N20DTRL Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
IRFR9N20DTRR Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
IRFR9N20DPBF Rochester Electronics, LLC
MOSFET N-CH 200V 9.4...
1
RFQ
6,000
In-stock
Get Quote
IRFR9N20DTRLPBF Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
FQAF19N60 onsemi
MOSFET N-CH 600V 11....
1
RFQ
50,000
In-stock
Get Quote
IRFR9N20DTRPBF Infineon Technologies
MOSFET N-CH 200V 9.4...
1
RFQ
50,000
In-stock
Get Quote
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