Supplier Device Package:
Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock Action
TPC8A02-H(TE12L,Q) Toshiba Semiconductor and Storage
MOSFET N-CH 30V 16A...
1
RFQ
50,000
In-stock
Get Quote
TPCA8A01-H(TE12L,Q Toshiba Semiconductor and Storage
MOSFET N-CH 30V 36A...
1
RFQ
50,000
In-stock
Get Quote
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