Supplier Device Package:
Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
IPW65R190C6 Rochester Electronics, LLC
N-CHANNEL POWER ...
1
RFQ
310
In-stock
Get Quote
STW13N95K3 STMicroelectronics
MOSFET N-CH 950V 10A...
1
RFQ
50,000
In-stock
Get Quote
IPW65R190C6FKSA1 Rochester Electronics, LLC
MOSFET N-CH 650V 20....
1
RFQ
50,000
In-stock
Get Quote
IPW65R190E6FKSA1 Rochester Electronics, LLC
MOSFET N-CH 650V 20....
1
RFQ
50,000
In-stock
Get Quote
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