Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
TK17V65W,LQ Toshiba Semiconductor and Storage
X35 PB-F POWER MOS...
1
RFQ
7,485
In-stock
Get Quote
TK17A65W,S5X Toshiba Semiconductor and Storage
X35 PB-F POWER MOS...
1
RFQ
50,000
In-stock
Get Quote
TK17N65W,S1F Toshiba Semiconductor and Storage
MOSFET N-CH 650V 17....
1
RFQ
50,000
In-stock
Get Quote
TK17E65W,S1X Toshiba Semiconductor and Storage
MOSFET N-CH 650V 17....
1
RFQ
50,000
In-stock
Get Quote
IXKC15N60C5 IXYS
MOSFET N-CH 600V 15A...
1
RFQ
50,000
In-stock
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