Product Status:
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Image Part Manufacturer Description MOQ Stock Action
XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A...
1
RFQ
50,000
In-stock
Get Quote
XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A...
1
RFQ
50,000
In-stock
Get Quote
FDP8870-F085 Rochester Electronics, LLC
MOSFET N-CH 30V 19A...
1
RFQ
50,000
In-stock
Get Quote
TPH4R10ANL,L1Q Toshiba Semiconductor and Storage
MOSFET N-CH 100V 92A...
1
RFQ
50,000
In-stock
Get Quote
FDP8870 Rochester Electronics, LLC
POWER FIELD-EFFE...
1
RFQ
50,000
In-stock
Get Quote
FDP8870-F085 onsemi
MOSFET N-CH 30V 19A...
1
RFQ
50,000
In-stock
Get Quote
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