Product Status:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
FQI4N20TU Rochester Electronics, LLC
MOSFET N-CH 200V 3.6...
1
RFQ
5,000
In-stock
Get Quote
FQI3N25TU Rochester Electronics, LLC
MOSFET N-CH 250V 2.8...
1
RFQ
3,648
In-stock
Get Quote
FQB4N20TM Rochester Electronics, LLC
MOSFET N-CH 200V 3.6...
1
RFQ
10,614
In-stock
Get Quote
FQI4N20 Rochester Electronics, LLC
N-CHANNEL POWER ...
1
RFQ
50,000
In-stock
Get Quote
FQB4N20LTM onsemi
MOSFET N-CH 200V 3.8...
1
RFQ
50,000
In-stock
Get Quote
FQB3N25TM onsemi
MOSFET N-CH 250V 2.8...
1
RFQ
50,000
In-stock
Get Quote
FQI4N20LTU onsemi
MOSFET N-CH 200V 3.8...
1
RFQ
50,000
In-stock
Get Quote
FQI4N20TU onsemi
MOSFET N-CH 200V 3.6...
1
RFQ
50,000
In-stock
Get Quote
FQI3N25TU onsemi
MOSFET N-CH 250V 2.8...
1
RFQ
50,000
In-stock
Get Quote
FQB4N20TM onsemi
MOSFET N-CH 200V 3.6...
1
RFQ
50,000
In-stock
Get Quote
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