Product Status:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
IXTH10N100D2 IXYS
MOSFET N-CH 1000V 10...
1
RFQ
50,000
In-stock
Get Quote
APT1201R5BVFRG Microchip Technology
MOSFET N-CH 1200V 10...
1
RFQ
50,000
In-stock
Get Quote
IXTT10N100D2 IXYS
MOSFET N-CH 1000V 10...
1
RFQ
50,000
In-stock
Get Quote
APT1201R5BVRG Microchip Technology
MOSFET N-CH 1200V 10...
1
RFQ
50,000
In-stock
Get Quote
2SK3466(TE24L,Q) Toshiba Semiconductor and Storage
MOSFET N-CH 500V 5A...
1
RFQ
50,000
In-stock
Get Quote
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