FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
IPP80R280P7XKSA1 Rochester Electronics, LLC
MOSFET N-CH 800V 17A...
1
RFQ
50,000
In-stock
Get Quote
IPP65R125C7XKSA1 Rochester Electronics, LLC
MOSFET N-CH 650V 18A...
1
RFQ
50,000
In-stock
Get Quote
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