Package / Case:
Supplier Device Package:
Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
NTE455 NTE Electronics, Inc
MOSFET-DUAL GATE...
1
RFQ
239
In-stock
Get Quote
SI7172ADP-T1-RE3 Vishay Siliconix
MOSFET N-CH 200V PP...
1
RFQ
50,000
In-stock
Get Quote
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