Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
CSD16411Q3 Texas Instruments
MOSFET N-CH 25V 14A...
1
RFQ
50,000
In-stock
Get Quote
CSD18543Q3A Texas Instruments
MOSFET N-CH 60V 60A...
1
RFQ
50,000
In-stock
Get Quote
CSD18543Q3AT Texas Instruments
MOSFET N-CH 60V 12A...
1
RFQ
50,000
In-stock
Get Quote
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