Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
STB11NM60-1 STMicroelectronics
MOSFET N-CH 650V 11A...
1
RFQ
50,000
In-stock
Get Quote
STB20NM50-1 STMicroelectronics
MOSFET N-CH 550V 20A...
1
RFQ
50,000
In-stock
Get Quote
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